Mardani, S. 2016. Copper and Silver Metallization for High Temperature Applications. Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 1406. 68 pp. Uppsala: Acta Universitatis Upsaliensis. ISBN 978-91-554-9656-2. High-temperature electricaland morphological-stability of interconnect is critical for electronic systems based on wide band gap (WBG)...

The influence of Ta additions on the microstructure and properties of Cu-Al-Ni shape memory alloys was investigated in this paper. The addition of Ta significantly affects the green and porosity densities; the minimum percentage of porosity was observed with the modified prealloyed Cu-Al-Ni-2.0 wt.% Ta. The phase transformation temperatures were shifted towards the highest values after Ta was a...

The diffusion barrier properties of as-deposited amorphous TaNx (x ' 0.5) and crystalline TaN between Cu and SiO2 have been investigated in Cu/Ta-N/Ta/SiO2 structures. The thermal reactions of Cu/TaNx /Ta/SiO2 and Cu/TaN/Ta/SiO2 after annealing in vacuum at 500 to 900°C were investigated by using sheet resistance measurements, glancing incident angle X-ray diffraction, scanning electron microsc...

Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5-3 nm)/Ta (2 nm)/Si were prepared by sputtering and electroplating techniques, in which the ultra-thin trilayer of Ru (2 nm)/MgO (0.5-3 nm)/Ta (2 nm) is used as the diffusion barrier against the interdiffusion between Cu film and Si substrate. The various structures of Cu/Ru/MgO/Ta/Si were characterized by four-point probes for their sheet resi...

The reactions in the Si/TaC/Cu and Si/Ta2N/Cu metallisation systems were investigated by x-ray diffraction, Rutherford backscattering, scanning electron microscope and the transmission electron microscopy. The results were then combined with the assessed ternary SiTa-C, Ta-C-Cu, Si-Ta-N and Ta-N-Cu phase diagrams. It was found that both barriers ultimately failed due to diffusion of Cu through ...

The reactions in the SirTarCu metallization system produced by the sputtering process were investigated by means of sheet Ž . Ž . resistance measurements, X-ray diffraction XRD , Rutherford backscattering spectroscopy RBS , scanning electron microscopy Ž . SEM and optical microscopy. In particular, the reaction sequence was emphasized. The reaction mechanisms and their relation to the microstru...